发明名称 Low-temperature etching environment
摘要 A low-temperature etching environment comprising a halogen and an inert gas in a ratio that does not induce the formation of an etch-limiting surface reaction layer during etching in the low-temperature etching environment. The surface temperature of a material being etched in the low-temperature environment is below that which would melt a photoresist material that has not been treated to increase its glass-reflow temperature.
申请公布号 US2004226911(A1) 申请公布日期 2004.11.18
申请号 US20030423185 申请日期 2003.04.24
申请人 DUTTON DAVID;SEAWARD KAREN L. 发明人 DUTTON DAVID;SEAWARD KAREN L.
分类号 C23F4/00;H01L21/306;(IPC1-7):C23F1/00 主分类号 C23F4/00
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