发明名称 |
Low-temperature etching environment |
摘要 |
A low-temperature etching environment comprising a halogen and an inert gas in a ratio that does not induce the formation of an etch-limiting surface reaction layer during etching in the low-temperature etching environment. The surface temperature of a material being etched in the low-temperature environment is below that which would melt a photoresist material that has not been treated to increase its glass-reflow temperature.
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申请公布号 |
US2004226911(A1) |
申请公布日期 |
2004.11.18 |
申请号 |
US20030423185 |
申请日期 |
2003.04.24 |
申请人 |
DUTTON DAVID;SEAWARD KAREN L. |
发明人 |
DUTTON DAVID;SEAWARD KAREN L. |
分类号 |
C23F4/00;H01L21/306;(IPC1-7):C23F1/00 |
主分类号 |
C23F4/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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