| 发明名称 |
METHOD FOR CLEANING SEMICONDUCTOR PROCESSING APPARATUS |
| 摘要 |
<p>A method for cleaning a microwave plasma processing apparatus is disclosed wherein a cleaning gas is introduced and then excited with microwave plasma (step 3). By applying high-frequency power to a substrate supporting stage by which a substrate to be processed is supported (step 4), the etching rate is improved, thereby shortening the cleaning time.</p> |
| 申请公布号 |
WO2004100246(A1) |
申请公布日期 |
2004.11.18 |
| 申请号 |
WO2004JP05798 |
申请日期 |
2004.04.22 |
| 申请人 |
OHMI, TADAHIRO;HIRAYAMA, MASAKI |
发明人 |
OHMI, TADAHIRO;HIRAYAMA, MASAKI |
| 分类号 |
H01L21/3065;C23C16/44;(IPC1-7):H01L21/306 |
主分类号 |
H01L21/3065 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
