| 摘要 |
PROBLEM TO BE SOLVED: To provide a thin film transistor of a bottom gate structure, wherein when amorphous silicon is modified to crystalline silicon by laser annealing, a difference in crystallization between a region on a gate line and its external region is reduced, and a high yield and the high performance are materialized. SOLUTION: In the thin film transistor of the bottom gate structure, a silicon layer 106 as an active layer is formed through a gate insulating film 105 on a gate line 104 formed on an insulating layer 103 on a substrate 101. The silicon layer 106 is crystallized by a light irradiation, and before the silicon layer 106 is formed, on the entire face or a part of the substrate 101 between the substrate 101 and the insulating layer 103, a high heat conductive layer 102 composed of a matter having the higher heat conductivity than that of the gate line 104 is formed. COPYRIGHT: (C)2005,JPO&NCIPI |
