发明名称 EVALUATION METHOD OF PHOTOELECTRIC CONVERSION DEVICE
摘要 <p><P>PROBLEM TO BE SOLVED: To obtain an easy and accurate evaluation method of a photoelectric conversion device formed by forming at least a photoelectric conversion layer and a conductive layer in order on a conductive substrate, especially to establish an evaluation method of an inner lead current of the photoelectric conversion device. <P>SOLUTION: A current value flowing in the photoelectric conversion device or quantum efficiency in a prescribed wavelength of the photoelectric conversion device is measured with a reverse bias voltage which is equivalent to at least three times as high as an open voltage of the photoelectric conversion device applied, and the photoelectric conversion device is evaluated based on the measurement values. The current value can be measured either in its bright state or in its dark state. Quantum efficiency is desirable to be compared with reference quantum efficiency measured without applying a reverse bias voltage. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p>
申请公布号 JP2004327859(A) 申请公布日期 2004.11.18
申请号 JP20030122669 申请日期 2003.04.25
申请人 NIPPON SHEET GLASS CO LTD;NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL & TECHNOLOGY 发明人 YAMAMOTO TORU;KONDO MICHIO;MATSUDA AKIHISA
分类号 H01L31/04;(IPC1-7):H01L31/04 主分类号 H01L31/04
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