| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory capable of inspecting an erased state by a simple method. <P>SOLUTION: The memory is provided with a plurality of memory cell groups in which a plurality of memory cells are serially connected, a plurality of word lines connected to the gate of one memory cell constituting the memory cell group, switch elements connected to the memory cell group, and a detecting means for detecting the nonconductive state of the memory cell group. By simultaneously turning the switch elements ON and connecting the plurality of memory cell groups connected by the word line all to the detecting means, that the memory cells selected from the plurality of memory cell groups by the word line are all in erased states or one or more are in written states is detected. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
