SINGLE-CRYSTAL SILICON WAFER AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a single-crystal silicon wafer that is made to have gettering ability even against slight amount of contaminations and can be applied to a device manufacturing process, and to provide a method of manufacturing the wafer. SOLUTION: The single-crystal silicon wafer has a structure constituted by successively laminating an intermediate layer and a silicon oxide film in this order on its rear surface. The solubility of the intermediate layer for heavy metal impurities is made larger than that of silicon and smaller than that of the silicon oxide film. COPYRIGHT: (C)2005,JPO&NCIPI