发明名称 Methods of pore sealing and metal encapsulation in porous low k interconnect
摘要 One method includes porous low k pore sealing that uses a combination of materials that bond and expand, thereby covering any pore or irregularities in the surface of an insulator adjacent to a conductor. The materials form a substantially impermeable barrier between the conductor and insulator that prevents leakage of the conductor into the insulator. Another method encapsulates the conductor on all exposed surfaces with an impermeable barrier before placement of an insulator, thereby preventing both anode extrusion and diffusion via pores in the insulator.
申请公布号 US2004227243(A1) 申请公布日期 2004.11.18
申请号 US20040824754 申请日期 2004.04.15
申请人 PERNG DUNG-CHING 发明人 PERNG DUNG-CHING
分类号 H01L21/768;(IPC1-7):H01L21/322;H01L23/48 主分类号 H01L21/768
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