SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device whose conductive resistance is low and whose breakdown strength is high. SOLUTION: A low-resistance area 13 that is of the same conductive type as a growth layer 12 and whose concentration is higher than that of the growth layer 13 is arranged under the bottom of a base area 33. A current generating when the semiconductor device 1 is made conductive runs in the low-resistance area 13, so that the conductive resistance is lowered. A second conductive type embedded area 24 is arranged deeper in the low-resistance area 13 just beneath a gate electrode plug 54, thereby improving the breakdown voltage. COPYRIGHT: (C)2005,JPO&NCIPI