| 发明名称 |
METHOD OF FORMING HIGH RESISTANCE REGION OF SEMICONDUCTOR DEVICE TO MINIMIZE EDDY CURRENT |
| 摘要 |
PURPOSE: A method of forming a high resistance region of a semiconductor device is provided to minimize eddy current and energy loss by using an air gap. CONSTITUTION: A mask pattern is formed on a semiconductor substrate(201). A trench is formed in the substrate as much as a predetermined depth by performing the first etching process. The trench is enlarged to the width and depth direction by performing the second etching process. The mask pattern is removed therefrom. An insulating layer(203) is filled in the trench. At this time, an air gap(204) is formed at both lower sides of the trench.
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| 申请公布号 |
KR20040097448(A) |
申请公布日期 |
2004.11.18 |
| 申请号 |
KR20030029746 |
申请日期 |
2003.05.12 |
| 申请人 |
MAGNACHIP SEMICONDUCTOR, LTD. |
发明人 |
CHOI, GYEONG GEUN |
| 分类号 |
H01L21/76;H01L21/02;H01L21/762;H01L21/822;H01L27/04;H01L27/08;(IPC1-7):H01L21/76 |
主分类号 |
H01L21/76 |
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