发明名称 |
Semiconductor device having DMOS and CMOS on single substrate |
摘要 |
A semiconductor device includes a P-type semiconductor substrate, a P-channel DMOS transistor, a CMOS transistor. The P-channel DMOS transistor is disposed on the P-type semiconductor substrate and includes a drain formed of the P-type semiconductor substrate and a source formed in the P-type semiconductor substrate on a main surface of the P-type semiconductor substrate. The CMOS transistor is disposed on the P-type semiconductor substrate and includes a P-channel MOS transistor and an N-channel MOS transistor. The P-channel MOS transistor is formed in an N-type region formed in the P-type semiconductor substrate on the main surface of the P-type semiconductor substrate. The N-channel MOS transistor is formed in a P-type region formed in the P-type semiconductor substrate on the main surface of the P-type semiconductor substrate. The P-type region is electrically isolated from the P-type semiconductor substrate by the N-type region.
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申请公布号 |
US2004227183(A1) |
申请公布日期 |
2004.11.18 |
申请号 |
US20040769817 |
申请日期 |
2004.02.03 |
申请人 |
NEGORO TAKAAKI;FUJIMOTO KEIJI;KIMURA TAKESHI |
发明人 |
NEGORO TAKAAKI;FUJIMOTO KEIJI;KIMURA TAKESHI |
分类号 |
H01L21/761;H01L21/336;H01L21/8234;H01L21/8238;H01L27/088;H01L27/092;H01L29/78;(IPC1-7):H01L29/76 |
主分类号 |
H01L21/761 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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