| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing an electronic device in which a photoresist can be cured even when a low dielectric constant interlayer insulating film is patterned, to provide a method for manufacturing an electronic device in which an energy beam absorbing material is actualized, and to provide an energy beam absorbing material. <P>SOLUTION: The energy beam absorbing material including a compound of formula (1) is formed on a low dielectric constant interlayer insulating film and EB curing of a photoresist is carried out. Since the compound of the formula (1) well absorbs an electron beam, an electron beam hardly reaches the low dielectric constant interlayer insulating film as a film to be processed. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
