METHOD FOR FABRICATING SEMICONDUCTOR DEVICE TO AVOID NON-UNIFORM ACCUMULATION OF ELECTRONS OF GATE OXIDE LAYER

摘要

PURPOSE: A method for fabricating a semiconductor device is provided to avoid non-uniform accumulation of electrons of a gate oxide layer in each gate electrode and control a tunneling phenomenon of the gate oxide layer caused by accumulation of electrons by forming a multilayered metal interconnection without accumulating electrons in the gate oxide layer. CONSTITUTION: An interlayer dielectric is deposited on a semiconductor substrate by a plasma method. A plug is formed in the interlayer dielectric. A metal layer is formed on the interlayer dielectric including the plug by a plasma method. Predetermined ions are implanted into the metal layer to discharge the electrons accumulated by the plasma method. The metal layer is patterned to form a metal interconnection coupled to the plug.