Three-Dimensional One-Time-Programmable Memory Comprising Off-Die Read/Write-Voltage Generator

摘要

The present invention discloses a three-dimensional one-time-programmable memory (3D-OTP) comprising an off-die read/write-voltage generator (VR/VW-generator). It comprises at least a 3D-array die and at least a peripheral-circuit die. At least a VR/VW-generator of the 3D-OTP arrays is located on the peripheral-circuit die instead of the 3D-array die. The VR/VW-generator generates at least a read voltage and/or a write voltage different from a supply voltage.

主权项

1. A discrete three-dimensional one-time-programmable memory (3D-OTP), comprising:
a 3D-array die comprising at least a 3D-OTP array, wherein said 3D-OTP array comprises a plurality of vertically stacked 3D-OTP cells; a peripheral-circuit die comprising at least an off-die VR/VW-generator of said 3D-OTP array, wherein said off-die VR/VW-generator generates at least a read voltage and/or a write voltage different from a supply voltage; means for coupling said 3D-array die and said peripheral-circuit die; wherein the number of back-end-of-line (BEOL) levels in said 3D-array die is at least twice as much as the number of interconnect levels in said peripheral-circuit die; said off-die VR/VW-generator is absent from said 3D-array die; and, said 3D-array die and said peripheral-circuit die are separate dice.