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发明名称
用于电阻式随机存取记忆体应用之铱基底上镨钙锰氧化物薄膜低温处理
摘要
一种用于电阻式随机存取记忆体装置之铱基底上涂覆镨钙锰氧化物薄膜的方法,包括制备一基底;沈积一阻障层于该基底上;沈积一铱层于该组障层上;旋转涂布一镨钙锰氧化物层于该铱层上;以三步骤之烘烤过程烘烤该镨钙锰氧化物层与基底;在快速热处理腔中后烤退火该基底与镨钙锰氧化物层;重复上述旋转涂布、烘烤与退火步骤直至镨钙锰氧化物层具有所欲之厚度;退火该基底与镨钙锰氧化物层;沈积一顶部电极;以及完成该电阻式随机存取记忆体装置。
申请公布号
TW200425415
申请公布日期
2004.11.16
申请号
TW093104471
申请日期
2004.02.23
申请人
夏普股份有限公司
发明人
张风燕;庄维佛;潘威;许胜藤
分类号
H01L21/8239
主分类号
H01L21/8239
代理机构
代理人
林志刚
主权项
地址
日本
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