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发明名称
温度补偿之电阻式随机存取记忆体
摘要
本发明揭示一种温度补偿之电阻式随机存取记忆体感测电路,用以改良对于温度变化之RRAM可读性。该电路包含一温度相依型元件,用以控制一温度补偿电路之反应,以产生一温度相依型信号来补偿该等记忆体电组织电阻状态的温度变化。该温度相依型元件可以控制供应给该记忆体电阻之感测信号,使得该记忆体电阻之电阻状态系对于温度变化而受到补偿。该温度相依型元件控制供应给该比较电路之参考信号,使得该比较电路所提供之输出信号系对于温度变化而受到补偿。该温度相依型元件较佳地系由与该等记忆体电阻相同的材料及过程所制成。
申请公布号
TW200425161
申请公布日期
2004.11.16
申请号
TW093106324
申请日期
2004.03.10
申请人
夏普股份有限公司
发明人
许胜藤
分类号
G11C7/06
主分类号
G11C7/06
代理机构
代理人
陈长文
主权项
地址
日本
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