发明名称 Hall effect ion source at high current density
摘要 A high current density, low voltage ion source includes a vacuum chamber. A plasma source induces generation of a plasma within the chamber, or injects a plasma directly into the chamber. A magnetic and electric field cooperate to guide the ions from the plasma region in a beam towards a substrate to be processed by the ions. A method of use of the ion source includes production of an ion beam for processing of a substrate.
申请公布号 US6819053(B2) 申请公布日期 2004.11.16
申请号 US20030419258 申请日期 2003.04.21
申请人 TOKYO ELECTRON LIMITED 发明人 JOHNSON WAYNE L.
分类号 F03H1/00;H01J27/00;(IPC1-7):H01J7/24;C23C16/00;C23C14/00 主分类号 F03H1/00
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