| 发明名称 |
Method of making a memory cell capacitor with Ta2O5 dielectric |
| 摘要 |
The present invention provides a method for making an integrated circuit capacitor having a Ta2O5 dielectric which includes a high-temperature nitrogen anneal and a low-temperature ozone anneal of the dielectric.
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| 申请公布号 |
US6818500(B2) |
申请公布日期 |
2004.11.16 |
| 申请号 |
US20020137424 |
申请日期 |
2002.05.03 |
| 申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
LI WEIMIN |
| 分类号 |
H01L21/02;H01L21/314;H01L21/316;(IPC1-7):H01L21/824 |
主分类号 |
H01L21/02 |
| 代理机构 |
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| 地址 |
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