| 发明名称 | P-type metal oxide semiconductor material and transistor | ||
| 摘要 | A p-type metal oxide semiconductor material is provided, which is composed of AlxGe(1-x)Oy, wherein 0<x≦0.6, and 1.0≦y≦2.0. The p-type metal oxide semiconductor material can be applied in a transistor. The transistor may include a gate electrode, a channel layer separated from the gate electrode by a gate insulation layer, and a source electrode and a drain electrode contacting two sides of the channel layer, wherein the channel layer is the p-type metal oxide semiconductor material. | ||
| 申请公布号 | US9401433(B1) | 申请公布日期 | 2016.07.26 |
| 申请号 | US201514982899 | 申请日期 | 2015.12.29 |
| 申请人 | INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE | 发明人 | Chiou Shan-Haw;Chou Tzu-Chi;Chao Wen-Hsuan;Cheng Hsin-Ming;Chang Mu-Tung;Huang Tien-Heng;Cai Ren-Fong |
| 分类号 | H01L29/00;H01L29/786;H01L29/24;H01L21/02 | 主分类号 | H01L29/00 |
| 代理机构 | Birch, Stewart, Kolasch & Birch, LLP | 代理人 | Birch, Stewart, Kolasch & Birch, LLP |
| 主权项 | 1. A p-type metal oxide semiconductor material, being composed of: AlxGe(1-x)Oy, wherein 0<x≦0.6; and 1.0≦y≦2.0. | ||
| 地址 | Hsinchu TW | ||