发明名称 |
Method of fabricating an integrated optoelectronic circuit |
摘要 |
A method of fabricating an integrated optoelectronic circuit. The method includes positioning a microchip on a first flexible dielectric substrate. A polymer electro-optic waveguide is positioned on or within the first flexible dielectric substrate. A ground electrode is positioned along the electro-optic waveguide. A signal electrode is positioned along the electro-optic waveguide opposite the ground electrode. A first patterned metallization layer is applied to the first flexible dielectric substrate. A second flexible dielectric substrate is positioned along the first flexible dielectric substrate. A plurality of via openings are provided in the first and second flexible dielectric substrates. A second patterned metallization layer is applied to the second flexible dielectric substrate.
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申请公布号 |
US6818466(B2) |
申请公布日期 |
2004.11.16 |
申请号 |
US20030728148 |
申请日期 |
2003.12.04 |
申请人 |
GENERAL ELECTRIC COMPANY |
发明人 |
KORNRUMPF WILLIAM;CLAYDON GLENN;DASGUPTA SAMHITA;FILKINS ROBERT;FORMAN GLENN;IANNOTTI JOSEPH;NIELSEN MATTHEW CHRISTIAN |
分类号 |
G02F1/01;G02F1/065;G02F1/225;(IPC1-7):H01L21/00 |
主分类号 |
G02F1/01 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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