发明名称 Method of fabricating an integrated optoelectronic circuit
摘要 A method of fabricating an integrated optoelectronic circuit. The method includes positioning a microchip on a first flexible dielectric substrate. A polymer electro-optic waveguide is positioned on or within the first flexible dielectric substrate. A ground electrode is positioned along the electro-optic waveguide. A signal electrode is positioned along the electro-optic waveguide opposite the ground electrode. A first patterned metallization layer is applied to the first flexible dielectric substrate. A second flexible dielectric substrate is positioned along the first flexible dielectric substrate. A plurality of via openings are provided in the first and second flexible dielectric substrates. A second patterned metallization layer is applied to the second flexible dielectric substrate.
申请公布号 US6818466(B2) 申请公布日期 2004.11.16
申请号 US20030728148 申请日期 2003.12.04
申请人 GENERAL ELECTRIC COMPANY 发明人 KORNRUMPF WILLIAM;CLAYDON GLENN;DASGUPTA SAMHITA;FILKINS ROBERT;FORMAN GLENN;IANNOTTI JOSEPH;NIELSEN MATTHEW CHRISTIAN
分类号 G02F1/01;G02F1/065;G02F1/225;(IPC1-7):H01L21/00 主分类号 G02F1/01
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