FERROELECTRIC MEMORY DEVICE FOR OBTAINING CONTACT RESISTANCE BETWEEN WIRING AND UPPER ELECTRODE SECURELY, AND METHOD FOR MANUFACTURING THE SAME

摘要

PURPOSE: A ferroelectric memory device and a manufacturing the same are provided to obtain the contact resistance between a wiring and an upper electrode securely, thereby enhancing reliability and yield of the ferroelectric memory device. CONSTITUTION: A lower electrode is formed over a semiconductor substrate(30). An insulating layer(41) is formed to surround the lower electrode. A ferroelectric layer is formed on the lower electrode and the insulating layer. The ferroelectric layer is partially removed to expose a portion of the lower electrode. An upper electrode(43) is formed on the ferroelectric layer. An inter-insulating layer(44) with a contact hole for exposing the upper electrode layer is formed on the upper electrode. A wiring contact(45) is formed in the contact hole to be connected to the upper electrode. A wiring(46) is formed to connect the upper layer through the wiring contact.