METHOD FOR SILICON CRYSTALLIZATION BY DIFFUSING NON-SEQUENTIAL REGION INTO CRYSTALLIZATION LAYER

摘要

PURPOSE: A method for silicon crystallization is provided to prevent the presence of a sequential region within an active channel by diffusing a non-sequential region including a non-sequential crystal into a crystallization layer. CONSTITUTION: The first crystallization region is formed by irradiating the first laser beam on an upper part of a mask. The mask is shifted to the X-axis direction and the second crystallization region is formed by irradiating the second laser beam on a predetermined region including an end part of the first crystallization region. The crystallization process to the X-axis direction is finished. The mask is shifted to the -Y-axis and the X-axis direction and the crystallization process to the -X-axis direction is finished. The mask is shifted to the -Y-axis and the -X-axis direction and the crystallization process to the X-axis direction is finished. The crystallization processes are performed repeatedly.