| 摘要 |
PROBLEM TO BE SOLVED: To solve the problem of difficulty in fabricating a multilayer structure of high quality, which is ascribable to the differences in material properties, and thus to a considerably different optimal growth temperature between a compound semiconductor layer comprising Al and a compound semiconductor layer comprising As and P. SOLUTION: A compound semiconductor element comprises the compound semiconductor layer comprising at least Al as a main constituent element, the compound semiconductor layer comprising at least As and P as main constituent elements, and a compound semiconductor layer, i.e. an intermediate layer, partially or entirely comprising at least As and P with mixed crystal composition varying slantingly or stepwise. The growth temperature is varied while the intermediate layer is grown to unnecessitate growth interruption. Thus, a stacked structure of the compound semiconductor comprising Al and the compound semiconductor comprising As and P of high quality can be obtained to realize excellent element properties. For example, an optical transmission module can be provided, which is operated at low voltage by means of a feedback laser device having AlGaInAs distribution. COPYRIGHT: (C)2005,JPO&NCIPI
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