| 发明名称 |
FLUORIDE THIN FILM MANUFACTURING METHOD |
| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a fluoride thin film manufacturing method capable of manufacturing a fluoride thin film by sputtering without complicated works by solving a problem when forming a target of fluoride, and depositing the fluoride thin film of the desired composition with less lack of fluorine. <P>SOLUTION: A fluoride thin film is deposited by sputtering with fluorine gas or gas containing fluorine as reaction gas by using a target containing elements to constitute at least desired fluoride in vitrified substance. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
| 申请公布号 |
JP2004315834(A) |
申请公布日期 |
2004.11.11 |
| 申请号 |
JP20030106966 |
申请日期 |
2003.04.10 |
| 申请人 |
SONY CORP |
发明人 |
OKITA HIROYUKI;KAWASHIMA TOSHITAKA |
| 分类号 |
G02B1/11;C01B9/08;C01F5/28;C01F7/50;C23C14/34 |
主分类号 |
G02B1/11 |
| 代理机构 |
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