| 发明名称 |
METHOD OF PRODUCING A HIGH RESISTIVITY SIMOX SILICON SUBSTRATE |
| 摘要 |
The present invention provides a method for generating silicon-on-insulator (SOI) wafers that exhibit a high electrical resistivity. In one embodiment of a method according to the teachings of the invention, a SIMOX process is sandwiched between two Full Oxygen Precipitation (FOP) cycles that sequester interstitial oxygen present in the substrate in the form of oxide precipitates, thereby enhancing the electrical resistivity of the susbtrate.
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| 申请公布号 |
US2004224477(A1) |
申请公布日期 |
2004.11.11 |
| 申请号 |
US20030434571 |
申请日期 |
2003.05.09 |
| 申请人 |
IBIS TECHNOLOGY CORPORATION;SEH AMERICA, INC. |
发明人 |
EROKHIN YURI;KONONCHUK OLEG V. |
| 分类号 |
H01L21/00;H01L21/762;H01L21/84;H01L23/522;(IPC1-7):H01L21/00 |
主分类号 |
H01L21/00 |
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