METHODS FOR DEPOSITING POLYCRYSTALLINE FILMS WITH ENGINEERED GRAIN STRUCTURES
摘要
Methods for controlling the grain structure of a polycrystalline Si-containing film involve depositing the film in stages so that the morphology of a first film layer deposited in an initial stage favorably influences the morphology of a second film layer deposited in a later stage. In an illustrated embodiment, the initial stage includes an anneal step. In another embodiment, the later stage involves depositing the second layer under different deposition conditions than for the first layer.
申请公布号
WO2004097897(A2)
申请公布日期
2004.11.11
申请号
WO2004US12239
申请日期
2004.04.21
申请人
ASM AMERICA, INC.;TODD, MICHAEL, A.;WEEKS, KEITH, D.