发明名称 |
Semiconductor device and manufacturing method thereof |
摘要 |
A method for manufacturing a semiconductor device is provided including: a step of forming a solid barrier metal layer on an interlayer insulating film; a removing step of removing at least a part of the solid barrier metal layer located at a place at which a pad opening portion is to be formed; a step of forming a solid second Al alloy film on the interlayer insulating film exposed in the removing step described above and the solid barrier metal layer; a step of patterning the solid second Al alloy film and the solid barrier metal layer so as to form a bonding pad portion on the interlayer insulating film; a step of forming a passivation film on the bonding pad portion and the interlayer insulating film; and a step of forming the pad opening portion in the passivation film at a position located on the bonding pad portion.
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申请公布号 |
US2004222526(A1) |
申请公布日期 |
2004.11.11 |
申请号 |
US20040789803 |
申请日期 |
2004.02.27 |
申请人 |
WADA KOICHI;NAMATAME TATSURU |
发明人 |
WADA KOICHI;NAMATAME TATSURU |
分类号 |
H01L23/52;H01L21/3205;H01L21/60;H01L21/768;H01L23/485;H01L23/522;H01L23/532;(IPC1-7):H01L23/48;H01L21/476 |
主分类号 |
H01L23/52 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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