OVER-DRIVEN ACCESS METHOD TO FERROELECTRIC MEMORY AND FERROELECTRIC STORAGE DEVICE

摘要

PROBLEM TO BE SOLVED: To provide an over-driven access method and device for a ferroelectric memory.

SOLUTION: When accessing data stored in the ferroelectric memory, an over-driven current is further provided. This current slightly raises/lowers the voltages in bit lines BL and BL' and further enlarges a potential difference therebetween. This enlargement is performed after the plate-line/bit-line voltage a has been raised, by using a plate-line/bit-line driving method.

COPYRIGHT: (C)2005,JPO&NCIPI