发明名称 FILM DEPOSITION METHOD BY SPUTTERING METHOD
摘要 PROBLEM TO BE SOLVED: To solve a problem that it is difficult to prevent the deposition of organic materials suspended in the air in a drying process necessary in the combination of degreasing with an organic solvent and cleaning with purified water as a means for previously cleaning a substrate in a film deposition method by a sputtering method. SOLUTION: In the film deposition method by the magnetron sputtering method, the soiling due to the organic materials stuck on the surface of the substrate is removed by producing a plasma gas of gaseous oxygen which is composed of 30-100 vol.% gaseous oxygen and 0-70 vol.% one or more kinds of gases selected from gaseous helium, gaseous neon, gaseous argon, gaseous xenon and gaseous krypton and using the gaseous oxygen plasma. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2004315250(A) 申请公布日期 2004.11.11
申请号 JP20030107775 申请日期 2003.04.11
申请人 CENTRAL GLASS CO LTD 发明人 ONISHI MASAJI
分类号 C03C23/00;C03C17/245;C23C14/02;C23C14/34;(IPC1-7):C03C23/00 主分类号 C03C23/00
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