| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a resist composition having excellent sensitivity and low line edge roughness and significantly reducing development defects. <P>SOLUTION: The positive resist composition contains: (A) a resin which has a structure containing a specified repeating unit and having a fluorine atom substituted in the main chain and/or the side chain of the polymer skeleton and which is decomposed by the effect of an acid to increase the solubility with an alkaline developing solution; (B) a compound which generates an acid by irradiation of active rays or radiation; and (C) a compound having a hydroxyl group and ≤2 pKa of its conjugate acid. The resist composition is a chemically amplified resist composition suitable when an exposure light source at ≥100 nm and ≤250 nm, preferably ≥100 nm and ≤180 nm, and more preferably F<SB>2</SB>excimer laser light (at 157 nm) is used. The method for forming a pattern is carried out by using the above composition. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
