| 摘要 |
PROBLEM TO BE SOLVED: To provide a process for fabricating a semiconductor device capable of forming a stabilized Co silicide while preventing leak and suppressing a variation in resistance, and to provide a semiconductor device. SOLUTION: In the process for fabricating a semiconductor device by arranging an insulating film spacer at a gate insulating film on a substrate, a gate side part consisting of a polysilicon layer and performing self-aligned silicification on the gate and source/drain regions, a metal film being silicificated is controlled in the direction for lowering the sputtering temperature, reducing the sputtering pressure and increasing the power of a cathode electrode fixed with a target and sputtering is performed to increase kinetic energy of metal molecules (step S3). A cap metal film is sputtered and heat treated at a specified temperature (step S4). The fabrication process further comprises a primary heat treatment step for forming a silicide layer, and a secondary heat treatment step for removing the cap metal film and a nonreaction part of the metal film to provide a low resistance silicide layer. COPYRIGHT: (C)2005,JPO&NCIPI |
