FERROELECTRIC CAPACITOR AND METHOD FOR MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE HAVING FERROELECTRIC CAPACITOR AND METHOD FOR MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To improve the reliability of a ferroelectric capacitor by allowing damaged regions on the ferroelectric film side wall of the ferroelectric capacitor to form outside the capacitor effective region. SOLUTION: First protrusions 38b are formed on the primary surface a of a lamellar section 38a for the formation of a base layer 38. An iridium film 82 is formed along the primary surface (a) of the lamellar section 38a and on the surfaces of the first protrusions 38b for the formation of second protrusions 62b. A silicon oxide film 83 is formed on parts of the iridium film 82 surrounding the second protrusions 62b, with the thickness so adjusted that its surface is virtually on the same plane as the surfaces (c) of the second protrusions 62b. A strontium bismuth tantalate film 84 is formed, which is a ferroelectric film extending from the top surfaces of the second protrusions 62b to the silicon oxide film 83. On the dielectric film, an iridium film 86 is formed at regions facing the top surfaces of the second protrusions 62b. The dielectric film is etched, so that parts are retained, which are in contact with the upper sections of the second protrusions 62b and with the silicon oxide film 83 and which surround the upper sections in belts of a specified width. COPYRIGHT: (C)2005,JPO&NCIPI