发明名称 Laser apparatus, laser annealing method, and manufacturing method of a semiconductor device
摘要 To provide a laser apparatus and a laser annealing method with which a crystalline semiconductor film with a larger crystal grain size is obtained and which are low in their running cost. A solid state laser easy to maintenance and high in durability is used as a laser, and laser light emitted therefrom is linearized to increase the throughput and to reduce the production cost as a whole. Further, both the front side and the back side of an amorphous semiconductor film is irradiated with such laser light to obtain the crystalline semiconductor film with a larger crystal grain size.
申请公布号 US2004224449(A1) 申请公布日期 2004.11.11
申请号 US20040871380 申请日期 2004.06.21
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 YAMAZAKI SHUNPEI;OHTANI HISASHI;TANAKA KOICHIRO;KASAHARA KENJI;KAWASAKI RITSUKO
分类号 H01L21/20;(IPC1-7):H01L21/00;H01L21/84 主分类号 H01L21/20
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