| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide an erroneous operation prevention circuit for preventing a malfunction that erroneously reads different data in the circuit by the influence of system noise, etc., while memory array data have to be read. <P>SOLUTION: This nonvolatile memory device which sets at least one operation mode among a plurality of operation modes including at least a first reading mode for reading data of a memory array 4, a program mode, an erasure mode and a second reading mode for reading data other than data of the memory array 4 in accordance with an input of a control command, performs processing regulated by the operation mode and can electrically rewrite data is provided with an operation mode forcing circuit 2a for setting the first reading mode regardless of input contents of the control command in a data protected state in which a control signal for data protection inhibits the setting of the program mode and the erasure mode. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
