Method of cleaning a deposition chamber and apparatus for depositing a metal on a substrate

摘要

A method of cleaning a deposition chamber includes applying an RF power to a first region of a deposition chamber where a metal oxide layer is attached. The metal oxide layer in the first region is thicker than the metal oxide layer existing at a second region of the deposition chamber. The RF power increases a plasma sheath potential in the first region to a value that is greater than that of a plasma sheath potential in the second region. An etching gas is introduced into the deposition chamber to remove the metal oxide layer. The metal oxide layer attached to the deposition chamber may be rapidly removed by the in-situ process without opening of the deposition chamber.