SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device of a dual gate type CMOS structure which can efficiently prevent a boron from thrusting through a gate insulating film in a p-MOSFET without encouraging the depletion of a gate electrode even when the film thickness of a gate insulating film is reduced. SOLUTION: The semiconductor device of a dual gate type CMOS structure is provided on a substrate 1 with a p-MOSFET 22 having a p-type polysilicon gate electrode 21, and an n-MOSFET 24 having an n-type polysilicon gate electrode 23. The fluorine concentration in the electrode 21 is 1017cm-3or less, and the fluorine concentration of a source drain region and the drain region 25 of the p-MOSFET 22 is 1019cm-3or more. COPYRIGHT: (C)2005,JPO&NCIPI