发明名称 Solid state image sensing apparatus with enhanced sensitivity and its driving method
摘要 The driver unit of the solid state image sensing apparatus of the present invention changes the substrate bias voltage from the first bias voltage to the second voltage which is lower than the first bias voltage and is for making a height of the overflow barrier higher than the height of the barrier in the readout gate and lowers the height of the overflow barrier by superimposing the saturation signal control pulse on the second bias voltage after the end of the exposure period and before sweeping out all the signal charge of the vertical CCDs. <IMAGE>
申请公布号 EP1475956(A2) 申请公布日期 2004.11.10
申请号 EP20040010032 申请日期 2004.04.28
申请人 MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 发明人 KOHNO, AKIYOSHI;MUTOH, NOBUHIKO;FUJITA, TAKESHI
分类号 H04N5/353;H01L27/148;H04N5/335;H04N5/341;H04N5/369;H04N5/372;(IPC1-7):H04N3/15 主分类号 H04N5/353
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