发明名称 |
SOLDER FILM MANUFACTURING METHOD, HEAT SINK WITH SOLDER FILM WITH DESIRED COMPOSITION AND MELTING POINT, AND SEMICONDUCTOR DEVICE WITH HEAT SINK |
摘要 |
<p>PURPOSE: A solder film manufacturing method, a heat sink with a solder film, and a semiconductor device with the heat sink are provided to obtain desired composition and melting point in the solder film by laminating properly many types of layers. CONSTITUTION: A unit layer is formed by laminating many types of predetermined layers. Each predetermined layer is made of one selected from a group consisting of Zn, Bi, Sn or a predetermined alloy. At this time, the predetermined alloy is made of two selected from a group consisting of Zn, Bi and Sn. A solder film is formed by laminating a plurality of unit layers. Each unit layer is substantially made of Zn, Bi and Sn.</p> |
申请公布号 |
KR20040094626(A) |
申请公布日期 |
2004.11.10 |
申请号 |
KR20040030051 |
申请日期 |
2004.04.29 |
申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
ITAKURA KATSUHIRO;CHIBA YUKIFUMI;FUJII SATOSHI |
分类号 |
H01L21/52;B23K35/00;B23K35/02;B23K35/14;B23K35/26;C23C30/00;H01L23/373;H01L23/40;H01L23/488;H01S5/02;(IPC1-7):H01L21/52 |
主分类号 |
H01L21/52 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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