| 摘要 |
PURPOSE: A synchronous memory device is provided to prevent an operation error due to ripple phenomenon of a DQS signal. CONSTITUTION: According to the synchronous memory device receiving a number of data by being synchronized to a rising edge and a falling edge of an operation clock, a data strobe buffer unit(100) outputs a rising pulse and a falling pulse each detecting a rising edge and a falling edge of a DQS signal clocked during a period of data input as maintaining a high-impedance state. A data align latch unit(400) latches and aligns the data by synchronizing the data to the rising pulse and the falling pulse. And a DQS signal control unit(200) controls the data strobe buffer unit so that the rising pulse and the falling pulse are output to the data align latch unit only the period when the DQS signal is clocked.
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