SG-DFB(SAMPLED GRATING DISTRIBUTED FEED-BACK) TUNABLE SEMICONDUCTOR LASER WITH SG-DBR(SAMPLED GRATING DISTRIBUTED BRAGG REFLECTOR)

摘要

PURPOSE: An SG-DFB(Sampled Grating Distributed Feed-Back) tunable semiconductor laser WITH an SG-DBR(Sampled Grating Distributed Bragg Reflector) is provided to tune a wavelength by integrating an SG-DFB structure and an SG-DBR structure and forming a phase control region of the SG-DFB structure. CONSTITUTION: A sampled grating(39) is formed on an n-type InP substrate(31) used as a lower clad layer. A phase control region of an InGaAsP waveguide and a gain region of an active layer are formed on the sampled grating. A p-type InP clad layer(32) used as an upper clad layer is formed thereon. A plurality of electrodes are formed on the p-type InP clad layer. A phase control region electrode(36) is formed on the phase control region. A gain region electrode(37) is formed on the gain region. A non-reflective thin film(33) is formed on a section of a semiconductor laser diode.