| 发明名称 |
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE WITH HOLE TRAP SITE IN INTERLAYER DIELECTRIC |
| 摘要 |
PURPOSE: A method for fabricating a semiconductor device is provided to prevent attack of mobile ion or moisture into a substrate by forming a hole trap site in an interlayer dielectric. CONSTITUTION: A semiconductor substrate(601) with a transistor including a gate(604) and a source/drain(605) is prepared. An interlayer dielectric(608) is formed on the entire surface of the resultant structure. A hole trap site is formed in the interlayer dielectric so as to block the attack of mobile ion or moisture by implanting dopants, such as phosphorous.
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| 申请公布号 |
KR20040093839(A) |
申请公布日期 |
2004.11.09 |
| 申请号 |
KR20030027680 |
申请日期 |
2003.04.30 |
| 申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
CHOI, JAE HUN;EOM, JAE CHEOL;LEE, GA WON;LEE, JE HUI;PARK, SEONG UK |
| 分类号 |
H01L21/31;H01L21/265;H01L21/336;H01L21/44;H01L21/469;H01L21/768;H01L29/16;H01L29/78;(IPC1-7):H01L21/31 |
主分类号 |
H01L21/31 |
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