发明名称 |
ESD protection design with turn-on restraining method and structures |
摘要 |
The present invention is directed to an electrostatic discharge (ESD) device with an improved ESD robustness for protecting output buffers in I/O cell libraries. The ESD device according to the present invention uses a novel I/O cell layout structure for implementing a turn-on restrained method that reduces the turn-on speed of an ESD guarded MOS transistor by adding a pick-up diffusion region and/or varying channel lengths in the layout structure.
|
申请公布号 |
US6815775(B2) |
申请公布日期 |
2004.11.09 |
申请号 |
US20010773754 |
申请日期 |
2001.02.02 |
申请人 |
INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE |
发明人 |
KER MING-DOU;PENG JENG-JIE;JIANG HSIN-CHIN |
分类号 |
H01L27/02;(IPC1-7):H01L23/62 |
主分类号 |
H01L27/02 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|