发明名称 |
Method for manufacturing capacitor of semiconductor memory device controlling thermal budget |
摘要 |
A method for manufacturing a capacitor of a semiconductor memory device by controlling thermal budgets is provided. In the method for manufacturing a capacitor of a semiconductor memory device, a lower electrode is formed on a semiconductor substrate. The lower electrode is heat-treated with a first thermal budget. A dielectric layer is formed on the heat-treated lower electrode. The dielectric layer is crystallized by heat-treating the dielectric layer with a second thermal budget which is smaller than the first thermal budget.
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申请公布号 |
US6815221(B2) |
申请公布日期 |
2004.11.09 |
申请号 |
US20020105181 |
申请日期 |
2002.03.25 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM WAN-DON;YOO CHA-YOUNG;HWANG DOO-SUP;JOO JAE-HYUN;CHUNG EUN-AE;JEONG YONG-KUK |
分类号 |
H01L27/04;H01L21/02;H01L21/314;H01L21/316;(IPC1-7):H01G7/06 |
主分类号 |
H01L27/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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