发明名称 LITHOGRAPHIC APPARATUS FOR COUNTERVAILING INFLUENCE OF THICK PELLICLE, DEVICE MANUFACTURING METHOD, MASK, AND MASK AND/OR PELLICLE CHARACTERIZING METHOD
摘要 <p>PURPOSE: A lithographic apparatus, a device manufacturing method, a mask, and a mask and/or pellicle characterizing method are provided to countervail the influence of a thick pellicle by controlling exactly each part of the lithographic apparatus using a controller. CONSTITUTION: A lithographic apparatus includes an illuminator(IL) for providing a projection beam(PB) of radiation, a support structure(MT) for supporting a patterning device(MA), a substrate table(WT) for loading a substrate(W), a projection system(PL) for projecting a patterned beam on a target of the substrate, and a controller. The controller is used for compensating or improving the displacement of an apparent mask position and image aberrations by controlling the apparatus.</p>
申请公布号 KR20040094369(A) 申请公布日期 2004.11.09
申请号 KR20040030548 申请日期 2004.04.30
申请人 ASML NETHERLANDS B.V. 发明人 JASPER JOHANNES CHRISTIAAN MARIA;BAGGEN MARCEL KOENRAAD MARIE;BRULS RICHARD JOSEPH;VANDIJCK HENDRIKUS ALPHONSUS LUDOVICUS;HOFMANS GERARDUS CAROLUS JOHANNUS;JANSEN ALBERT JOHANNES MARIA;LUIJTEN CARLO CORNELIS MARIA;PONGERS WILLEM RICHARD;WEHRENS MARTIJN GERARD DOMINIQUE;UITTERDIJK TAMMO;CICILIA ORLANDO SERAPIO;BOOM HERMAN;DEMARTEAU MARCEL JOHANNES LOUIS MARIE
分类号 G03F1/62;G03F1/64;G03F1/82;G03F7/20;H01L21/027;(IPC1-7):H01L21/027 主分类号 G03F1/62
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