Thin film transistor with multiple gates using metal induced lateral crystallization and method of fabricating the same,申请号US20020298559-传众专利搜索

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发明名称	Thin film transistor with multiple gates using metal induced lateral crystallization and method of fabricating the same
摘要
申请公布号	US6815267(B2)	申请公布日期	2004.11.09
申请号	US20020298559	申请日期	2002.11.19
申请人		发明人
分类号	H01L21/20;H01L21/336;H01L21/77;H01L21/84;H01L27/12;H01L29/423;H01L29/786;(IPC1-7):H01L21/00	主分类号	H01L21/20
代理机构		代理人
主权项
地址

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