发明名称 |
UNIT PIXEL OF CMOS IMAGE SENSOR WITH IMPROVED DYNAMIC RANGE |
摘要 |
PURPOSE: A unit pixel of a CMOS image sensor is provided to improve dynamic range and sensibility of the image sensor by reducing the capacitance of a floating diffusion region. CONSTITUTION: A unit pixel comprises a photodiode(21) for storing optical charges, a transfer transistor for transferring the optical charges to a floating diffusion region(23), a capacitor(24) of MIM(Metal-Insulator-Metal) structure connected in series to the floating diffusion region, and a drive transistor. A gate electrode(26a) of the drive transistor is connected to the floating diffusion region. The MIM capacitor is provided with a first electrode(24a) connected to the floating diffusion region and a second electrode(24b).
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申请公布号 |
KR20040093985(A) |
申请公布日期 |
2004.11.09 |
申请号 |
KR20030027874 |
申请日期 |
2003.04.30 |
申请人 |
MAGNACHIP SEMICONDUCTOR, LTD. |
发明人 |
LEE, WON HO |
分类号 |
H01L27/146;(IPC1-7):H01L27/146 |
主分类号 |
H01L27/146 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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