| 摘要 |
PURPOSE: A bit line sensing method and a memory device for the same are provided, which have a uniform bit line sensing time without regard to variation of an external power supply voltage. CONSTITUTION: According to a timing diagram related to a bit line sensing operation, control signals(wlstd,wlstd_ses) are generated from an active signal(pxact) by an external voltage(Vext). And a control signal(sest) is generated from the control signal(wlstd_ses) by a core voltage(Vcore). A sensing timing control unit uses the core voltage, and the control signal(sest) is inputted to a sense amp control unit using the external voltage, and thus the output signal(sest) of the sensing timing control unit is shifted to a voltage level corresponding to the external voltage(Vext).
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