CMOS IMAGE SENSOR IMPROVING DARK PROPERTY BY DEFORMING GATE STRUCTURE OF RESET TRANSISTOR AND MANUFACTURING METHOD THEREOF

摘要

PURPOSE: A CMOS image sensor and a method for manufacturing the same are provided to improve dark property and to easily remove free electrons by deforming a gate structure of a reset transistor. CONSTITUTION: A CMOS image sensor comprises a photodiode(PD), a transfer transistor(Tx), a reset transistor(Rx), a drive transistor(Dx), and a select transistor(Sx). The reset transistor is located at one corner of the photodiode while connecting a power voltage node(VDD). A gate of the reset transistor is partially overlapped with an edge except for the other corner of the photodiode.