发明名称 FILM DEPOSITION APPARATUS EMPLOYING SWP-CVD FOR ORGANIC ELECTROLUMINESCENCE AND METHOD THEREFOR
摘要 PURPOSE: An apparatus and a method for deposition of a protective film for organic electroluminescence(EL) are provided to form a high density SiNx film for protection of an organic EL apparatus on a substrate by using cooling member. CONSTITUTION: A film deposition apparatus includes a microwave generation member(1), a process chamber(3), a microwave transmission member(3a), and a cooling member(4). The process chamber has a window made of a dielectric. The microwave transmission member guides the microwave generated by the microwave generation member to the dielectric window so as to radiate the microwave into the process chamber. The cooling member cools a substrate(9) having an organic electroluminescence apparatus formed thereon. A film deposition gas is isolated and excited through using a surface wave plasma generated by emission of the microwave into the process chamber while the substrate is being cooled by the cooling member. A silicon nitride film provided as a protective film on the organic EL apparatus through a surface wave plasm(SWP) CVD is formed.
申请公布号 KR20040094333(A) 申请公布日期 2004.11.09
申请号 KR20040029458 申请日期 2004.04.28
申请人 SHIMADZU CORPORATION 发明人 SUZUKI MASAYASU;SARUWATARI TETSUYA
分类号 H05B33/10;C23C16/42;C23C16/458;C23C16/511;H01L51/50;H05B33/02;H05B33/04;(IPC1-7):H05B33/10 主分类号 H05B33/10
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