METHOD FOR FORMING ISOLATION LAYER OF SEMICONDUCTOR DEVICE PREVENT PEELING OF HDP-CVD OXIDE LAYER USING PLASMA TREATMENT

摘要

PURPOSE: A method for forming an isolation layer of a semiconductor device is provided to improve adhesive force between an SOG(Spin On Glass) layer and an HDP-CVD oxide layer, thereby preventing peeling by using a plasma treatment. CONSTITUTION: A trench(2) is formed by selectively etching an isolation region of a silicon substrate(1). An SOG layer(3) is partially coated in the trench and cured. The SOG layer is treated by plasma in order to have hydrophilic surface. Then, an HDP-CVD oxide layer(4) is entirely filled in the trench and polished to expose the substrate by CMP(Chemical Mechanical Polishing).