发明名称 CANTILEVER TYPE FILM BULK ACOUSTIC RESONATOR AND MANUFACTURING METHOD THEREOF
摘要 PURPOSE: A cantilever type FBAR(Film Bulk Acoustic Resonator) and a manufacturing method thereof are provided to simplify manufacturing processes, to improve Q value, and to connect easily the same with outer terminals by exposing an upper and lower electrode. CONSTITUTION: An insulating layer(110) is deposited on a substrate(100). A sacrificial layer is deposited on the insulating layer and patterned. A lower electrode(120) is deposited thereon and patterned. A piezoelectric layer(130) is deposited on the lower electrode and patterned. An upper electrode(140) is deposited on the piezoelectric layer and patterned. The sacrificial layer is removed from the resultant structure by using etching, so that an air gap(170) is formed under the lower electrode.
申请公布号 KR20040093238(A) 申请公布日期 2004.11.05
申请号 KR20030025481 申请日期 2003.04.22
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 HONG, YEONG TAEK;KIM, SANG CHAE;SONG, IN SANG
分类号 H01L41/09;H01L41/02;H01L41/08;H01L41/18;H01L41/187;H01L41/22;H01L41/23;H01L41/253;H03H3/02;H03H3/04;H03H9/17 主分类号 H01L41/09
代理机构 代理人
主权项
地址